[화학공학]Ge RF sputtering power에 의한 zn2GeO4 박막의 구조적, 광학적 특성(영문)
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추천 연관자료
- 목차
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1. ABSTRACT
2.
3. 1. INTRODUCTION
4. 2. Experiments
5. 3.Result and Discussion
6. 4. Conclusion
5. References
- 본문내용
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3.Result and Discussion
Fig. 1 shows the XRD patterns from the as-grown films. There is no new peak appearing when RF power of Ge is 0 W except for three peaks of ZnO (1 0 0), (0 0 2)and (0 0 4) located at 2θ = 30.888, 34.218, and 72.138, respectively. At RF power 100 W, these three peaks shift toward larger angle apparently and their intensity has also enhanced slightly. This indicates that ZnO has a better crystallinity and some internal stress in the film
Fig. 1. The XRD patterns for the film in as-grown state
and sputtered at different powers.
has been released [16]. At the point, four other new peaks can be observed at 2θ = 12.398, 24.978, 27.288, and 33.268, which correspond to the diffraction peaks of Zn2GeO4 (1 1 0), Zn2GeO4 (2 2 0), Ge (1 1 1) and GeO, respectively. It is evident that the structural properties of the sample have changed. With power of Ge increasing continually, the intensity of Zn2GeO4 (1 1 0), Zn2GeO4 (2 2 0) and GeO peaks and three ZnO peaks become much higher. The peak around 34° should be considered as a multiple peak of Zn2GeO4 (4 1 0) and ZnO (0 0 2) because we know that their positions are very close in XRD patterns. So, the facts shown in XRD measurements reveal that the change of structure for the prepared samples during RF magnetron sputtering.
Fig. 2 shows the PL spectra of Zn2GeO4 thin films measured as a function of the power of Ge. The PL peak of the ZnO film as a reference sample grown with the Ge power of 0 W was observed at 3.34 eV, as shown in Fig. 1(a), which was in good agreement with the exciton luminescence for undoped ZnO films. The PL spectra of Zn2GeO4 films exhibited predominantly the Ge-composition dependent excitonic emissions. The PL peaks of Zn2GeO4 films were revealed at 3.40, 3.47 and 3.51 eV with the increasing power of Ge from100 to 300 W. It was found that these blue shifts were due to the improvement of Ge incorporation in Zn2GeO4 films. The content of Ge in Zn2GeO4 films was obtained from the PL spectra by using the following equation:
- 참고문헌
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