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[재료실험] 산화층 두께에 따른 MOS Capacitor의 I-V, C-V 그래프 변화
100319859104위키피디아, 검색어 “leckage (semiconductors) http://en.wikipedia.org 2011-10-255Sima Dimtrijev, Principles of semiconductor devices. oxford university press. (1ed), 2006. 252p-279p6S.M.Sze ; Kwok K. Ng, physics of semiconductor devices (3ed), 2007. wiley, 228p7Wolfe, D.; J. Singh . Surface and Coatings Technology. 2000. 124. pp. 142–1538「Nanocad와 함께
32페이지 | 1,900원 | 2013.04.11
100 Dollar) Watch of Swiss and Japan occupied 75% in amount market Korean product recognition is low, compared qualityExport of Cheap Chinese product and Taiwan product is acceleratingUAEIn luxury product market, Swiss product occupied 25.2% / Japanese Product occuppied 15.9% In low-priced product market, Hong-Kong, Taiwan, Chinese product led the market but Hong-Kong product is good than th
37페이지 | 2,500원 | 2013.03.20
100 nm pitch and 15 nm diameter features, (b) the hybrid hole array mold, and (c) imprint result of the hybrid hole array mold.Looking at the Figure 3 the cross section of a patterned fiber, we see that the grating structures were uniformly distributed on the cylindrical surface parallel to the fiber.Figure 3. SEM image of 200 nm pitch grating on the surface of 125 μm diameter optical fiber wi
4페이지 | 800원 | 2011.11.21
[반도체공정] Electrical Properties of MOS capacitors using Al2O3 or SiO2(영문)
100KHzFigure 8. C-V curve for Al2O3-100KHzCapacitances of Al2O3 and SiO2 are 0.52nF and 1.54nF. From the result, we calculated dielectric constant using equation C= . As the result, dielectric constant of Al2O3 is 7.87, and SiO2 is 31.90. Theoretical dielectric constant of Al2O3 is 9.0 and SiO2 is 3.9. The result of Al2O3 is similar to Theoretical value But SiO2 is much larger compare to theore
11페이지 | 1,400원 | 2011.11.02