레포트 (2)
[디스플레이재료실험] TFT(Thin Film Transistor)
silicon is on the gas SiH2Cl2, of which it is at relatively low temperatures separates. ⇒ With the support of the plasma excitation are the low process temperatures at 300℃ is possible. ⇒ The deposition of SiO2 and silicon nitride Si3N4 at low conformity.⇒ High growth speed up to 500 nm/min is possible.∙ Deposit at low temperature because of plasma.∙ High vacuum and taking long t
11페이지 | 1,400원 | 2010.06.29
silicon carbide (SiC).Aluminium nitride (AlN) can be used to fabricate ultraviolet LEDs with wavelengths down to 200-250 nm.Gallium nitride (GaN) is used to make blue LEDs and lasers.Boron nitride (BN) is used in Cubic boron nitride.IntroductionExperimentalAnodeCathodeGlow dischargeGlass slidesTargetMatching NetworkRF GeneratorAl, Ga, In 3 wt% + ZnOGlass SubstrateSputter power : 17
19페이지 | 1,700원 | 2010.11.09