[공학] Growth of ZnO-Al films by FR sputtering at room temperature for solar cell applications(영문)

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  • 2010.11.09 / 2019.12.24
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목차
1.Introduction

2.Experimental

3.Result and discussions

4.Conclusion

5. Q & A

본문내용
The ZnO:Al films were deposited onto glass substrates.

A ceramic ZnO:Al2O3 (2 wt.%) target was used.

the chamber was evacuated to a background pressure of 5 *10-4 Pa

The working pressure during the film deposition was in the range from 0.3 Pa to 1.0 Pa by applying pure Ar gas.

The discharge power was between 100 and 200 W.

As the increasing of the thickness of the deposited film,
the (0 0 2) peak becomes more intense and sharper.
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