[화학공학]Study of structural and optical properties of Ge and Sn doped ZnO films(영문)
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추천 연관자료
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ABSTRACT
1. Introduction
2. Experimental
3. Result and discussion
4. Conclusion
- 본문내용
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2. Experimental
The films were deposited in a conventional horizontal furnace on Si(1 1 1) substrates. SnO2 (99.99%) (Mol10:2) and ZnO/Ge slices (99.999%, purity), (Mol 10:2) powders were used as the source materials for growth of the Sn- and Ge-doped ZnO films, respectively. The ZnO/SnO2 powder was placed on an alumina boat and inserted into a horizontal tube furnace, in order to serve as the evaporation source. Silicon substrate, which had been etched with a solution of HF (43%) and de-ionized water (1:10) for 10 min, was located downstream from the source material. The source material was heated up to 1200C, and the temperature of the substrate was maintained 500 ℃ 700 ℃ 1000 ℃ during the growth process of the Sn and Ge doped ZnO films. High-purity N2 gas was fed at about 100 sccm into the tube furnace at one end, while the other end was connected to a rotary pump. The growth process was allowed to proceed for 1 h. A vacuum of 6 Torr was maintained inside the tube furnace during the deposition of the films. The crystal structure and morphology of the products were investigated by X-ray diffraction (XRD, Siemens D5000). The elemental contents of the products were investigated using energy dispersive X-ray (EDX, Quanta 200F). Room temperature photoluminescence (PL, Jobin Yvon Horiba HR 800 UV) spectroscopy was employed to study the optical properties of the ZnO films using a He–Cd laser with a wavelength of 325 nm as the excitation source at a 20 mW power level.
3. Result and discussion
Fig. 1 shows the XRD patterns of all the samples. Fig. 1 (a) is the typical XRD pattern of ZnO films with a preferred C axis orientation of (002) which has a full width at half maximum (FWHM) of 0.3°. The XRD pattern of sample (b) also shows the high C axis oriented ZnO grains with FWHM of 0.5°, which suggests that the crystallization of ZnO turns worse. Meanwhile, other three additional peaks attributed to Zn2GeO4 are observed in sample (b). Fig. 1 (c) shows that the crystallization of ZnO tends to be much worse. Furthermore, except for that of Zn2GeO4, no diffraction
- 참고문헌
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1. Study of structural and optical properties of Ge doped ZnO films. Meifu jiang.Zhenning Wang, Zhaoyuan ning Jiangsu Key Laboratory of Thin Films, Department of Physics, Suzhou University, Suzhou, 215006, China 2009
2. Effect of S- and Sn-doping to the optical properties of ZnO nanobelts. Ramin Yousefi *, Burhanuddin amaluddin Solid State Laboratory, Department of Physics, University of Malaya, 50603 Kuala Lumpur, Malaysia. 2009
3.The synthesisofSn-doped ZnO nanowires on ITO substrateand their optical properties YongSu, LingLi, Yiqing Chen, Qingtao Zhou, MiGao, Qiong Chen, Yi Feng School of Materials Science and Engineering, Hefei University of Technology, Hefei, Anhui 230009, People’s Republic of China. 2009
4. Influence of Sn-doping in hydrothermal methods on the optical property of the ZnO nanorods JahyunYang, June young Lee, Kyung tae kIm, Sang woo Lim ,Department of Chemical and Biomolecular Engineering, Yonsei University, 134Shinchon-dong, Seodaemoon-gu, Seoul120-749, Republic of Korea. 2009
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