[화학공학]Study of structural and optical properties of Ge and Sn doped ZnO films(영문)

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화학공학 Study of structural and optical properties of Ge and Sn doped ZnO films(영문)-1페이지

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화학공학 Study of structural and optical properties of Ge and Sn doped ZnO films(영문)-10페이지

추천 연관자료

목차: 1 Introduction
2 Experiments
3 Result and discussion
4 Conclusions

본문내용: Ge is an indirect band gap semiconductor with smaller energy difference between indirect gap and direct gap, and smaller effective masses for electron and hole pairs.

Small ionic radius difference between Ge ion and Zn ion.

These characteristics lead to the expectation that it is much easier to change the electronic structure around the band edge.

- The effects of doping and substrate temperature on the structural and optical properties of the Ge doped ZnO films were investigated by XRD, XPS, UV, PL

- The XRD patterns show that Zn2GeO4 phase was formed in the films and the crystallization of ZnO deteriorates

- The enhancement of UV light emission at about 380nm may be caused by excitons which were formed at the interface between Zn2GeO4 and ZnO grains.

- The PL spectrum show that some Ge2+ should replace the Zn2+ positions during the Zn2GeO4 grains growth and form the Ge2+ luminescence centers in Zn2GeO4 grains.

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