These days, it is important to study about the surface of the semiconductor and analyze its structure and composition. An EELS (electron energy loss spectroscopy) is one of the powerful tools for study the sample. One method to analyze the TEM data. It is the study of the vibrational motion of atoms and molecules on and near the surface by the analysis of the energy spectrum of low-energy electrons backscattered from it. In EELS, a material is exposed to a beam of electrons with a known, narrow range of kinetic energies. Some of the electrons will lose energy by inelastic scattering, which is primarily an interaction of the beam electron with an electron cloud of atoms in the sample. This inelastic scattering results in both a loss of energy and a change in momentum. These interactions may be phonon excitations, inter and intra band transitions, plasmon excitations or inner shell ionisations. The latter are particularly useful for detecting the elemental components of a material, as the energy transferred in such an interaction is related to the ionization potential of the atom, and therefore the spectrum can be compared to that of known samples.
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